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TXS0101DBVR.转换 - 电压电平
TXS0101DBVR.转换 - 电压电平
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TXS0101DBVR.转换 - 电压电平

型号:

TXS0101DBVR

品牌:

TI

封装:

SOT-23-6

包装:

3000

PDF资料:

点击下载PDF

产品信息

Features
1
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– A Port
– 2500 V Human-Body Model (A114-B)
– 200 V Machine Model (A115-A)
– 1500 V Charged-Device Model (C101)
– B Port
– 8 kV Human-Body Model (A114-B)
– 200 V Machine Model (A115-A)
– 1500 V Charged-Device Model (C101)
• No Direction-Control Signal Needed
• Maximum Data Rates
– 24 Mbps (Push Pull)
– 2 Mbps (Open Drain)
• Available in the Texas Instruments NanoFree™
Package
• 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B
port (VCCA ≤ VCCB)
• VCC Isolation Feature – If Either VCC Input Is at
GND, Both Ports Are in the High-Impedance State
• No Power-Supply Sequencing Required – Either
VCCA or VCCB Can be Ramped First
• Ioff Supports Partial-Power-Down Mode Operation
2 Applications
• Handsets
• Smartphones
• Tablets
• Desktop PCs
3 Description
This one-bit non-inverting translator uses two
separate configurable power-supply rails. The A port
is designed to track VCCA. VCCA accepts any supply
voltage from 1.65 V to 3.6 V. The B port is designed
to track VCCB. VCCA must be less than or equal to
VCCB. VCCB accepts any supply voltage from 2.3 V to
5.5 V. This allows for low voltage bidirectional
translation between any of the 1.8 V, 2.5 V, 3.3 V,
and 5 V voltage nodes.
When the output-enable (OE) input is low, all outputs
are placed in the high-impedance state.
To ensure the high-impedance state during power up
or power down, OE should be tied to GND through a
pull-down resistor; the minimum value of the resistor
is determined by the current-sourcing capability of the
driver.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TXS0101DBV SOT-23 (6) 2.90 mm × 1.60 mm
TXS0101DCK SC70 (6) 2.00 mm × 1.25 mm
TXS0101DRL SOT-5X3 (6) 1.90 mm × 1.60 mm
TXS0101YZP DSBGA (6) 0.8